Solid-state imaging element, method for manufacturing solid-state imaging element, and electronic device

ABSTRACT

A solid-state imaging element including: a sensor substrate in which a photoelectric conversion section is arranged and formed; a circuit substrate in which a circuit for driving the photoelectric conversion section is formed, the circuit substrate being laminated to the sensor substrate; a sensor side electrode drawn out to a surface of the sensor substrate on a side of the circuit substrate and formed as one of a projection electrode and a depression electrode; and a circuit side electrode drawn out to a surface of the circuit substrate on a side of the sensor substrate, formed as one of the depression electrode and the projection electrode, and joined to the sensor side electrode in a state of the circuit side electrode and the sensor side electrode being fitted together.

CROSS REFERENCE TO RELATED APPLICATIONS

The present invention is a Continuation of U.S. application Ser. No.14/277,391, filed May 14, 2014, which is a Continuation of U.S.application Ser. No. 13/337,961, filed Dec. 27, 2011, now U.S. Pat. No.8,766,389, Jul. 1, 2014, which claims priority from Japanese PriorityPatent Application 2011-012818 filed Jan. 25, 2011, the entire contentsof which are incorporated herein by reference.

BACKGROUND

The present disclosure relates to a solid-state imaging element formedby laminating a sensor substrate and a circuit substrate to each otherin such a manner as to join the electrodes of the sensor substrate andthe circuit substrate to each other, a method for manufacturing thesolid-state imaging element, and an electronic device using thesolid-state imaging element.

A three-dimensional structure in which a photoelectric conversionsection and a peripheral circuit section are laminated to each other isproposed as one of structures for achieving further miniaturization ofelements and higher density of pixels in a solid-state imaging elementincluded in an electronic device such as a portable telephone, a digitalcamera, a camcorder, or the like.

In manufacturing a solid-state imaging element of such athree-dimensional structure, for example a sensor substrate in which aCIS (complementary metal oxide semiconductor image sensor) having aphotoelectric conversion section is formed and a circuit substrate inwhich a peripheral circuit section is formed are laminated to eachother. The lamination of these substrates is performed by arrangingelectrodes (bonding pads) drawn out to surfaces on one side of each ofthe substrates such that the electrodes (bonding pads) are opposed toeach other, and performing heat treatment in this state. In order tofacilitate the joining of the bonding pads to each other by the heattreatment, an insulating film surrounding bonding pads is recessed inadvance (see Japanese Patent Laid-Open No. 2006-191081, for example, forthe above description).

In addition, a constitution in which the sensor substrate and thecircuit substrate are laminated to each other so as to cancel theinternal stress of both of the substrates is proposed in order toprevent a distortion or a warp in the sensor substrate and the circuitsubstrate laminated as described above (see Japanese Patent Laid-OpenNo. 2007-234725, for example, for the above description).

SUMMARY

However, in the solid-state imaging element of the three-dimensionalstructure having the constitution described above, when the heattreatment is performed in a state of the electrodes on the sensorsubstrate and the electrodes on the circuit substrate being opposed toeach other, a void tends to occur at the joining surface between theelectrodes of the sensor substrate and the electrodes of the circuitsubstrate, thus reducing a joining area between the electrodes. Such areduction of the joining area between the electrodes is a factor incausing an increase in contact resistance between the electrodes of thesensor substrate and the electrodes of the circuit substrate and peelingbetween the substrates due to a decrease in mechanical strength of thejoining surfaces.

Accordingly, it is desirable to provide a solid-state imaging element ofa three-dimensional structure that makes it possible to secure a joiningarea between electrodes in a constitution formed by laminating a sensorsubstrate and a circuit substrate to each other in such a manner as tojoin the electrodes of the sensor substrate and the circuit substrate toeach other, and improve reliability. It is also desirable to provide amethod for manufacturing such a solid-state imaging element and anelectronic device whose reliability is improved by using such asolid-state imaging element.

A solid-state imaging element according to an embodiment of the presenttechnology includes: a sensor substrate in which a photoelectricconversion section is arranged and formed; and a circuit substrate inwhich a circuit for driving the photoelectric conversion section isformed, the circuit substrate being laminated to the sensor substrate.The solid-state imaging element also includes: a sensor side electrodedrawn out to a surface of the sensor substrate on a side of the circuitsubstrate; and a circuit side electrode drawn out to a surface of thecircuit substrate on a side of the sensor substrate. In the solid-stateimaging element, the sensor side electrode and the circuit sideelectrode are joined to each other in a state of a projection electrodebeing fitted in a depression electrode.

In the solid-state imaging element of such a constitution, the joiningsurface between the sensor side electrode and the circuit side electrodeof the constitution in which the projection electrode is fitted in thedepression electrode has a larger joining area than in a case in whichflat electrodes are joined to each other. Thus, even when a void occursat the joining surface between the sensor side electrode and the circuitside electrode, a substantial joining area can be secured.

In addition, a method for manufacturing a solid-state imaging elementaccording to an embodiment of the present technology performs thefollowing steps. First, a sensor side electrode is formed on one mainsurface side of a sensor substrate in which a photoelectric conversionsection is arranged and formed. In addition, a circuit side electrode isformed on one main surface side of a circuit substrate in which acircuit for driving the photoelectric conversion section is formed.Next, the sensor side electrode and the circuit side electrode arejoined to each other by arranging the sensor substrate and the circuitsubstrate such that the sensor substrate and the circuit substrate areopposed to each other and laminating the sensor substrate and thecircuit substrate to each other in a state of the sensor side electrodeand the circuit side electrode being opposed to each other, andperforming heat treatment. In the method performing such steps, thesensor substrate and the circuit substrate are laminated to each otherin a state of a projection electrode forming one of the sensor sideelectrode and the circuit side electrode being fitted in a depressionelectrode forming the other of the electrodes.

In the above manufacturing method, the sensor substrate and the circuitsubstrate are laminated to each other on a self-alignment basis byfitting the projection electrode into the depression electrode, and asolid-state imaging element of the above-described constitution can beobtained.

Another embodiment of the present technology is an electronic devicehaving a solid-state imaging element of the above constitution.

As described above, according to the present technology, a substantialjoining area between the sensor side electrode and the circuit sideelectrode can be ensured in the constitution in which the sensorsubstrate and the circuit substrate are laminated to each other in sucha manner as to join the electrodes of the sensor substrate and thecircuit substrate to each other. Thus, an increase in contact resistanceis suppressed, and a joining strength between the electrodes is ensured,so that the reliability of the solid-state imaging element of thethree-dimensional structure and the electronic device using thesolid-state imaging element can be improved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic block diagram of a solid-state imaging element towhich the present technology is applied;

FIG. 2 is a principal part sectional view of a constitution of asolid-state imaging element according to a first embodiment;

FIGS. 3A, 3B, and 3C are sectional process views of a method formanufacturing a sensor substrate used in the first embodiment;

FIGS. 4A, 4B, 4C, and 4D are principal part sectional process views ofthe formation of a projection electrode formed in the first embodiment;

FIGS. 5A, 5B, 5C, and 5D are sectional process views of a method formanufacturing a circuit substrate used in the first embodiment;

FIGS. 6A, 6B, 6C, and 6D are principal part sectional process views of afirst example of the formation of a depression electrode formed in thefirst embodiment;

FIGS. 7A and 7B are principal part sectional process views of a secondexample of the formation of the depression electrode formed in the firstembodiment;

FIG. 8 is a sectional process view (1) of a manufacturing methodaccording to the first embodiment;

FIGS. 9A and 9B are principal part sectional process views of thejoining of electrodes in the manufacturing method according to the firstembodiment;

FIG. 10 is a sectional process view (2) of the manufacturing methodaccording to the first embodiment;

FIGS. 11A and 11B are principal part sectional views of parts of asolid-state imaging element according to a second embodiment;

FIGS. 12A and 12B are principal part sectional views of parts of asolid-state imaging element according to a third embodiment; and

FIG. 13 is a block diagram of an electronic device according to anembodiment of the present technology.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments of the present technology will hereinafter bedescribed in the following order with reference to the drawings.

1. Example of Schematic Configuration of Solid-State Imaging Elementaccording to Embodiment

2. Constitution of Solid-State Imaging Element according to FirstEmbodiment

3. Method for Manufacturing Sensor Substrate Used in First Embodiment

4. Method for Manufacturing Circuit Substrate Used in First Embodiment

5. Method for Manufacturing Solid-State Imaging Element according toFirst Embodiment

6. Constitution of and Method for Manufacture of Solid-State ImagingElement according to Second Embodiment

7. Constitution of and Method for Manufacture of Solid-State ImagingElement according to Third Embodiment

8. Embodiment of Electronic Device

Incidentally, common constituent elements in embodiments and examples ofmodification are identified by same reference numerals, and repeateddescription thereof will be omitted.

1. Example of Schematic Configuration of Solid-State Imaging Elementaccording to Embodiment

FIG. 1 shows a schematic configuration of a MOS (metal oxidesemiconductor) type solid-state imaging element as an example of asolid-state imaging element fabricated by applying a manufacturingmethod according to each embodiment of the present technology. Thesolid-state imaging element 1 shown in FIG. 1 is a solid-state imagingelement of a so-called three-dimensional structure including a sensorsubstrate 2 and a circuit substrate 7 laminated to the sensor substrate2 in a state of being stacked on the sensor substrate 2.

A pixel region 4 in which a plurality of pixels 3 including aphotoelectric conversion section are regularly arrangedtwo-dimensionally is provided on one surface side of the sensorsubstrate 2. In the pixel region 4, a plurality of pixel driving lines 5are arranged in a row direction, a plurality of vertical signal lines 6are arranged in a column direction, and one pixel 3 is disposed in astate of being connected to one pixel driving line 5 and one verticalsignal line 6. Each of these pixels 3 has a pixel circuit formed by aphotoelectric conversion section, a charge accumulating section, aplurality of transistors (so-called MOS transistors), a capacitiveelement, and the like. Incidentally, a part of the pixel circuit may beshared by a plurality of pixels.

In addition, peripheral circuits such as a vertical driving circuit 8, acolumn signal processing circuit 9, a horizontal driving circuit 10, asystem control circuit 11, and the like are provided on one surface sideof the circuit substrate 7.

The vertical driving circuit 8 is formed by a shift register, forexample. The vertical driving circuit 8 selects the pixel driving lines5 drawn out from the side of the sensor substrate 2 to the side of thecircuit substrate 7, supplies a pulse for driving the pixels to theselected pixel driving lines 5, and drives the pixels 3 arranged on theside of the sensor substrate 2 in row units. That is, the verticaldriving circuit 8 sequentially selects and scans each of the pixels 3arranged in the sensor substrate 2 in row units in a vertical direction.Then, a pixel signal based on a signal charge generated according to anamount of light received in each of the pixels 3 is supplied to thecolumn signal processing circuit 9 via the vertical signal lines 6arranged so as to be perpendicular to the pixel driving lines 5.

The column signal processing circuit 9 is arranged for example for eachcolumn of the pixels 3 provided in the sensor substrate 2. The columnsignal processing circuit 9 subjects signals output from pixels 3 of onerow via the vertical signal lines 6 to signal processing for noiseremoval and the like for each pixel column. Specifically, the columnsignal processing circuit 9 performs signal processing such ascorrelated double sampling (CDS) for removing fixed pattern noisespecific to the pixels, signal amplification, analog/digital conversion(AD), and the like.

The horizontal driving circuit 10 is formed by a shift register, forexample. The horizontal driving circuit 10 sequentially outputs ahorizontal scanning pulse, and selects each of constituent parts of thecolumn signal processing circuit 9 in order, to make each of theconstituent parts of the column signal processing circuit 9 output apixel signal.

The system control circuit 11 receives an input clock and dataspecifying an operation mode and the like, and outputs data such asinternal information of the solid-state imaging element 1 and the like.Specifically, the system control circuit 11 generates a clock signal anda control signal serving as a reference for the operation of thevertical driving circuit 8, the column signal processing circuit 9, thehorizontal driving circuit 10, and the like on the basis of a verticalsynchronizing signal, a horizontal synchronizing signal, and a masterclock. The system control circuit 11 then inputs these signals to thevertical driving circuit 8, the column signal processing circuit 9, thehorizontal driving circuit 10, and the like.

A circuit for driving each pixel is formed by the peripheral circuits 8to 11 as described above and the pixel circuit of each pixel 3 providedin the sensor substrate 2.

2. Constitution of Solid-State Imaging Element according to FirstEmbodiment

FIG. 2 is a principal part sectional view showing a constitution of thesolid-state imaging element according to the first embodiment, and is asectional view of three pixels in FIG. 1. A detailed constitution of thesolid-state imaging element according to the first embodiment will bedescribed in the following on the basis of the principal part sectionalview.

The solid-state imaging element 1 shown in FIG. 2 is a solid-stateimaging element of the three-dimensional structure in which the sensorsubstrate 2 and the circuit substrate 7 are laminated to each other in astate of being stacked on each other, as described above. The sensorsubstrate 2 includes a semiconductor layer 2 a and a wiring layer 2 bdisposed on a surface of the semiconductor layer 2 a which surface is onthe side of the circuit substrate 7. The circuit substrate 7 includes asemiconductor layer 7 a and a wiring layer 7 b disposed on a surface ofthe semiconductor layer 7 a which surface is on the side of the sensorsubstrate 2.

In addition, a protective layer 15, a color filter layer 17, and anon-chip lens 19 are laminated in this order on a surface of the sensorsubstrate 2 which surface is on an opposite side from the circuitsubstrate 7. Next, detailed constitutions of the respective layersforming the sensor substrate 2 and the circuit substrate 7 will bedescribed in order from the side of the sensor substrate 2.

[Semiconductor Layer 2 a (on Side of Sensor Substrate 2)]

The semiconductor layer 2 a on the side of the sensor substrate 2 is alayer in the form of a thin film having a single crystal structure, andis formed by thinning a semiconductor substrate made of single crystalsilicon, for example. In the semiconductor layer 2 a, a photoelectricconversion section 21 formed of an n-type impurity layer (or a p-typeimpurity layer), for example, is provided for each pixel on the side ofa first surface on which the color filter layer 17 and the like arearranged. The following description will be made supposing that thephotoelectric conversion section 21 is formed of an n-type impuritylayer as an example. In this case, a part of the semiconductor layer 2 awhich part surrounds the photoelectric conversion section 21 is of a p+type, and functions as an element isolation region.

The photoelectric conversion section 21 is disposed so as to have anaperture width narrowed from the side of the first surface of thesemiconductor layer 2 a (side of the color filter layer 17) to the sideof a second surface of the semiconductor layer 2 a as an opposite side.A charge transferring section 23 formed of an n+ type impurity and acharge accumulating section 25 for holes which section is formed of a p+type impurity layer are provided in this order in the part of thephotoelectric conversion section 21 which part has the narrowed aperturewidth on the side of the second surface of the semiconductor layer 2 a.The charge accumulating section 25 is disposed along the second surfaceof the semiconductor layer 2 a.

A floating diffusion FD and source/drain sections 27 of a transistor Tr,the floating diffusion FD and the source/drain sections 27 being formedof an n+type impurity layer, as well as an impurity layer serving as alower electrode of a capacitive element not shown in FIG. 2 are providedin a surface layer on the side of the second surface of thesemiconductor layer 2 a (side of the wiring layer 2 b).

[Wiring Layer 2 b (on Side of Sensor Substrate 2)]

The wiring layer 2 b on the side of the sensor substrate 2 is formed bya multilayer wiring structure, for example. The wiring layer 2 b has atransfer gate TG and a gate electrode 33 of the transistor provided on agate insulating film 31 as well as an upper electrode of the capacitiveelement not shown in FIG. 2 on the side of an interface between thewiring layer 2 b and the semiconductor layer 2 a. The transfer gate TGis disposed between the floating diffusion FD and the chargetransferring section 23. The gate electrode 33 is disposed between thesource/drain sections 27. The transfer gate TG and the gate electrode 33are formed of polysilicon, for example, provided for each pixel, andcovered with an interlayer insulating film 35.

In the wiring layer 2 b, an interlayer insulating film 41 is furtherlaminated on the interlayer insulating film 35. Wiring 43 whoseinsulation is secured by the interlayer insulating film 41 is providedover multiple layers. Further, a sensor side electrode 45 is drawn outto the surface of the interlayer insulating film 41 which surface is onthe side of the circuit substrate 7.

A connecting hole 37 reaching the source/drain section 27 or thetransfer gate TG is provided in a part of the interlayer insulating film35 and the gate insulating film 31. The wiring 43 is connected to thesource/drain section 27 or the transfer gate TG via the connecting hole37. Suppose that a connecting hole not shown in FIG. 2 is also providedin the interlayer insulating film 41, so that connection is establishedbetween pieces of wiring 43 and 43 in different layers. Further, aconnecting hole 47 for connecting the wiring 43 and the sensor sideelectrode 45 to each other is provided in the interlayer insulating film41. The sensor side electrode 45 is connected to the photoelectricconversion section 21 or the transistor Tr provided on the side of thesecond surface of the semiconductor layer 2 a via the wiring 43.

Suppose that the sensor substrate 2 formed as described above has apixel circuit formed by the floating diffusion FD, the transfer gate TG,the transistor Tr, and the capacitive element not shown in FIG. 2 inconjunction with the photoelectric conversion section 21. Incidentally,a part of the pixel circuit may be shared by a plurality of pixels(photoelectric conversion sections 21).

In the present first embodiment, the sensor side electrode 45 is formedas a projection electrode projecting from the surface of the interlayerinsulating film 41. The part of the projection electrode formed as thesensor side electrode 45 which part projects from the interlayerinsulating film 41 may be a part or the whole of the sensor sideelectrode 45.

Suppose that for example a part of each such projection electrode whichpart is embedded in the interlayer insulating film 41 has a cylindricalshape, and that the bottom surface side of a cylinder in the part of theprojection electrode which part projects from the interlayer insulatingfilm 41 is formed as a convex curved surface in a substantiallyhemispheric shape. In addition, the whole of the projection electrodehaving the convex curved surface on the one bottom surface side of sucha cylindrical shape may be disposed on the interlayer insulating film41. Further, each projection electrode may have a shape formed by a widebase part and a convex curved surface in a substantially hemisphericshape provided on an upper part of the base part. In this case, only thepart of the convex curved surface in the substantially hemispheric shapemay be projected from the interlayer insulating film 41, and the surfaceof the base part may be at a same height as the surface of theinterlayer insulating film 41.

[Semiconductor Layer 7 a (on Side of Circuit Substrate 7)]

The semiconductor layer 7 a on the side of the circuit substrate 7 is alayer in the form of a thin film having a single crystal structure, andis formed by thinning a semiconductor substrate made of single crystalsilicon, for example. In the semiconductor layer 7 a, well layers ofrespective conductivity types not shown in FIG. 2 are provided on asurface side of the semiconductor layer 7 a on which surface side thesensor substrate 2 is disposed, and source/drain sections 51 of atransistor Tr are provided so as to be of respective conductivity typesin a surface layer of the well layers. In addition, an impurity layerforming a lower electrode of a capacitive element not shown in FIG. 2 isprovided in the surface layer of the well layers.

[Wiring Layer 7 b (on Side of Circuit Substrate 7)]

The wiring layer 7 b on the side of the circuit substrate 7 is formed bya multilayer wiring structure, for example. The wiring layer 7 b has agate electrode 55 provided on a gate insulating film 53 as well as anupper electrode of the capacitive element not shown in FIG. 2 at aninterface on the side of the semiconductor layer 7 a. The gate electrode55 is disposed between the source/drain sections 51. The gate electrode55 and the upper electrode are formed of polysilicon, for example,provided for each pixel, and covered with an interlayer insulating film57.

In the wiring layer 7 b, an interlayer insulating film 61 is furtherlaminated on the interlayer insulating film 57. Wiring 63 whoseinsulation is secured by the interlayer insulating film 61 is providedover multiple layers as required. Further, a circuit side electrode 65is drawn out to the surface of the interlayer insulating film 61 whichsurface is on the side of the sensor substrate 2.

A connecting hole 59 reaching the source/drain section 51 or the gateelectrode 55 is provided in a part of the interlayer insulating film 57and the gate insulating film 53. The wiring 63 is connected to thesource/drain section 51 or the gate electrode 55 via the connecting hole59. In addition, when the wiring 63 is in multiple layers, pieces ofwiring 63 and 63 in different layers are connected to each other by aconnecting hole provided in the interlayer insulating film 61. Further,a connecting hole 67 for connecting the wiring 63 and the circuit sideelectrode 65 to each other is provided in the interlayer insulating film61. The circuit side electrode 65 is connected to the transistor Trprovided in the surface of the semiconductor layer 7 a via the wiring63.

Suppose that the circuit substrate 7 formed as described above has aperipheral circuit formed by the transistor Tr, the capacitive elementnot shown in FIG. 2, and the like.

In the present first, the circuit side electrode 65 is formed as adepression electrode. Suppose that such a circuit side electrode 65 hasa concave shape in the central part of a surface of the circuit sideelectrode 65 which surface faces the side of the sensor substrate 2, andthat the inner circumferential wall of the concave shape is formed by aconcave curved surface where the electrode surface of the circuit sideelectrode 65 is exposed.

Each projection electrode formed as the sensor side electrode 45 on theside of the sensor substrate 2 described earlier is fitted into eachdepression electrode formed as the circuit side electrode 65 asdescribed above, and the circuit side electrodes 65 and the sensor sideelectrodes 45 are joined to each other in a one-to-one correspondence. Ajoining surface between the circuit side electrodes 65 and the sensorside electrodes 45 is a curved surface. In addition, the peripheries ofthe projection electrodes (sensor side electrodes 45) projecting fromthe interlayer insulating film 41 are surrounded by the depressionelectrodes (circuit side electrodes 65).

Suppose that the projection electrodes (sensor side electrodes 45) andthe depression electrodes (circuit side electrodes 65) are formed of amaterial capable of being joined to each other while retaining a goodcontact property, and that the material is used for the projectionelectrodes (sensor side electrodes 45) and the depression electrodes(circuit side electrodes 65) with process compatibility taken intoconsideration.

In addition, suppose that in this state, the entire surface of theinterlayer insulating film 41 on the side of the sensor substrate 2 andthe entire surface of the interlayer insulating film 61 on the side ofthe circuit substrate 7 are in close contact with each other. In thiscase, when the interlayer insulating films 41 and 61 are formed of asilicon oxide base material, the interlayer insulating films 41 and 61are joined to each other by an intermolecular bond between silicon (Si)and oxygen (O).

[Protective Film 15]

The protective film 15 is formed by a material film having a passivationproperty. A silicon oxide film, a silicon nitride film, a siliconoxynitride film, or the like is used for the protective film 15.

[Color Filter Layer 17]

The color filter layer 17 is formed by color filters of respectivecolors provided in a one-to-one correspondence with respectivephotoelectric conversion sections 21. The arrangement of the colorfilters of the respective colors is not limited.

[On-Chip Lens 19]

On-chip lenses 19 are provided in a one-to-one correspondence with therespective photoelectric conversion sections 21 and the color filters ofthe respective colors which color filters form the color filter layer17, and are formed so as to condense incident light on the respectivephotoelectric conversion sections 21.

Action and Effect of Solid-State Imaging Element according to FirstEmbodiment

According to the solid-state imaging element 1 formed as describedabove, the sensor side electrode 45 is formed as a projection electrode,the circuit side electrode 65 is formed as a depression electrode, andthe sensor side electrode 45 and the circuit side electrode 65 arejoined to each other by fitting the projection electrode into thedepression electrode. Thus, a joining area between the sensor sideelectrode 45 and the circuit side electrode 65 is larger than in a casein which flat electrodes are joined to each other. Thus, even when avoid occurs at the joining surface between the sensor side electrode 45and the circuit side electrode 65 in a joining process, for example, asubstantial joining area can be secured.

In addition, because of the constitution in which the projectionelectrode is fitted into the depression electrode in a plane in whichthe sensor substrate 2 and the circuit substrate 7 are opposed to eachother, a strength against stress from a horizontal direction withrespect to the laminated state can be obtained.

As a result, in the solid-state imaging element 1 of thethree-dimensional structure formed by laminating the sensor substrate 2and the circuit substrate 7 in such a manner as to join the electrodes45 and 65 to each other, it is possible to prevent an increase incontact resistance between the electrodes 45 and 65 and secure a joiningstrength, and thus improve reliability.

3. Method for Manufacturing Sensor Substrate Used in First Embodiment

FIGS. 3A, 3B, and 3C are sectional process views of assistance inexplaining a method for manufacturing the sensor substrate used inmanufacturing the solid-state imaging element of the constitutiondescribed in the first embodiment. FIGS. 4A, 4B, 4C, and 4D areprincipal part sectional process views of the formation of an electrodein the sensor substrate. The method for manufacturing the sensorsubstrate used in the first embodiment will be described in thefollowing with reference to these figures.

[FIG. 3A]

First, as shown in FIG. 3A, a single crystal silicon substrate, forexample, is prepared as a semiconductor substrate 20. A well region madeof a p-type impurity layer not shown in FIG. 3A is formed in the surfacelayer of the semiconductor substrate 20, and a photoelectric conversionsection 21 made of an n-type impurity layer is formed at a predetermineddepth within the well region. Further, a charge transferring section 23made of an n+ type impurity layer and a charge accumulating section 25for holes, the charge accumulating section 25 being made of a p+ typeimpurity layer, are formed in the surface layer of the photoelectricconversion section 21. In addition, a floating diffusion FD andsource/drain sections 27 made of an n+ type impurity layer as well as alower electrode of a capacitive element not shown in FIG. 3A are formed.

The formation of these impurity layers is performed by impurityintroduction from the surface side of the semiconductor substrate 20,and is for example performed by ion implantation from above a mask andsubsequent activating heat treatment. The ion implantation is performedwith implantation energy set appropriately according to the depth ofeach of the impurity layers.

Next, a gate insulating film 31 is formed using a silicon oxide film ora silicon nitride film on the surface of the semiconductor substrate 20in which surface the charge accumulating section 25 is formed. Further,a transfer gate TG and a gate electrode 33 made of polysilicon areformed on the gate insulating film 31. The transfer gate TG is formedbetween the floating diffusion FD and the charge transferring section23. The gate electrode 33 is formed between the source/drain sections27. In addition, an upper electrode of the capacitive element not shownin FIG. 3A is formed in the same process as the above.

The process up to the above is not particularly limited in processprocedure, but can be performed by an appropriate procedure. Forexample, after the transfer gate TG and the gate electrode 33 are formedon the gate insulating film 31, ion implantation for forming thefloating diffusion FD and the source/drain sections 27 may be performedwith the transfer gate TG and the gate electrode 33 used as a mask.

[FIG. 3B]

Next, as shown in FIG. 3B, an interlayer insulating film 35 made ofsilicon oxide, for example, is formed on the semiconductor substrate 20in a state of covering the transfer gate TG and the gate electrode 33.Thereafter, connecting holes reaching the transfer gate TG and one ofthe source/drain sections 27 are formed in the interlayer insulatingfilm 35 and the gate insulating film 31.

Next, the formation of wiring 43 connected to each of the transfer gateTG and one of the source/drain sections 27 via the connecting holes 37,the formation of an interlayer insulating film 41, the formation of thewiring 43, and the formation of the interlayer insulating film 41 areperformed repeatedly. Suppose that the wiring 43 is formed by using ametallic material having excellent conductivity such as aluminum,tungsten, molybdenum, or the like. The interlayer insulating film 41 isformed by using an appropriate material, and may be formed by alaminated structure using different materials. Suppose that theinterlayer insulating film 41 in an uppermost layer is formed by a filmhaving an excellent embedding property, and is formed with a flatsurface.

Incidentally, it suffices to perform the above forming process accordingto an ordinary semiconductor process, and the process procedure is notlimited. For example, a so-called damascene process may be applied tothe formation of the wiring 43. In this case, the wiring 43 can beformed by using a metallic material unsuitable for an etching process,such as copper (Cu) or the like.

[FIG. 3C]

Next, as shown in FIG. 3C, a sensor side electrode 45 connected to thewiring 43 is formed in the interlayer insulating film 41 in theuppermost layer. This sensor side electrode is formed as a projectionelectrode projecting from the interlayer insulating film 41.

FIGS. 4A to 4D represent a forming procedure in a case where such aprojection electrode (sensor side electrode 45 in this case) is formedby an embedding method. An example of a method for forming theprojection electrode (sensor side electrode 45) will be described in thefollowing with reference to FIGS. 4A to 4D.

[FIG. 4A]

First, as shown in FIG. 4A, a depression part 41 a for forming theelectrode and a hole part 41 b (connecting hole 47 shown in FIG. 2)reaching the wiring 43 from the bottom part of the depression part 41 aare formed in the surface layer of the interlayer insulating film 41covering the wiring 43. Suppose that the depression part 41 a has acylindrical inner peripheral shape, for example. The formation of thedepression part 41 a and the hole part 41 b is performed by forming amask on the interlayer insulating film 41 by applying a lithographymethod and etching the interlayer insulating film 41 from above themask. Either of the formation of the depression part 41 a and theformation of the hole part 41 b may be performed first. A process ofremoving the mask is performed after the completion of the etching, andpost-treatment by organic cleaning is further performed.

[FIG. 4B]

Next, as shown in FIG. 4B, a barrier metal layer 45-1 is formed on theinterlayer insulating film 41 in a state of covering the inner walls ofthe hole part 41 b and the depression part 41 a, and a copper (Cu) film45-2 is formed in a state of sufficiently filling the hole part 41 b andthe depression part 41 a. The barrier metal layer 45-1 is to prevent thediffusion of copper, and is formed of tantalum nitride (TaN), titaniumnitride (TiN), or the like. It suffices to provide the barrier metallayer 45-1 as required. The formation of the copper (Cu) film 45-2 isperformed by the formation of a seed layer on the barrier metal layer45-1 and film formation on the seed layer by a plating method.Incidentally, in this case, as an example, the wiring 43 is also shownas embedded wiring composed of a barrier metal layer 43-1 and a copper(Cu) film 43-2 formed by a damascene process.

[FIG. 4C]

Next, as shown in FIG. 4C, an excess copper (Cu) film 45-2 and an excessbarrier metal layer 45-1 on the interlayer insulating film 41 areremoved to leave the copper (Cu) film 45-2 and the barrier metal layer45-1 only within the depression part 41 a and on the depression part 41a. In this case, for example, chemical mechanical polishing (hereinafterreferred to as CMP) is performed from above the copper (Cu) film 45-2.Thus, a cylindrical sensor side electrode 45 composed of the copper (Cu)film 45-2 and the barrier metal layer 45-1 is formed within thedepression part 41 a of the cylindrical inner peripheral shape.

In addition, after the sensor side electrode 45 individuated within eachdepression part 41 a is formed by the CMP, the polishing is continuedfurther with a CMP condition set such that polishing speed is[Interlayer Insulating Film 41 >Sensor Side Electrode 45]. For the CMPcondition relating to such polishing speed, a nonselective polishingslurry polishing all of Cu, the barrier metal, and the interlayer film,for example HS-T815 (manufactured by Hitachi Chemical Co., Ltd.) is usedas a slurry for the barrier metal film. By adjusting the concentrationof hydrogen peroxide used as an oxidizing agent to 0 to 0.5 wt %, thepolishing of Cu as a main component of the sensor side electrode 45 canbe suppressed sufficiently with respect to the polishing of siliconoxide (SiO₂) forming the interlayer insulating film 41.

By thus adjusting the polishing speed and continuing performing the CMP,the polishing of the interlayer insulating film 41 progresses fasterthan that of the sensor side electrode 45, thus resulting in a shapesuch that the sensor side electrode 45 projects from the interlayerinsulating film 41. In addition, the projection corner part of thesensor side electrode 45 projecting from the interlayer insulating film41 is gradually formed into a round shape by the polishing. Thus, thepolishing is continued until the part of the sensor side electrode 45which part projects from the interlayer insulating film 41 as a wholeforms a convex curved surface in a substantially hemispheric shape.

[FIG. 4D]

Thereafter, as shown in FIG. 4D, the projection height h of the sensorside electrode 45 from the interlayer insulating film 41 is adjusted bymaking only the interlayer insulating film 41 receding by etching asrequired. For example, in a case of etching of the interlayer insulatingfilm 41 made of a silicon oxide (SiO₂) base material, the etching isperformed with a dilute hydrofluoric acid used as an etchant. At thistime, the interlayer insulating film 41 may be etched until the whole ofthe sensor side electrode 45 is projected.

As a result of the above processes, the sensor side electrode 45 drawnout to the surface on the side of the sensor substrate 2 projects fromthe interlayer insulating film 41 to the projection height h, and isformed as a projection electrode whose protruding section has a width w1and whose protruding section is formed in a substantially hemisphericshape.

4. Method for Manufacturing Circuit Substrate Used in First Embodiment

FIGS. 5A, 5B, 5C, and 5D are sectional process views of assistance inexplaining a method for manufacturing the circuit substrate used inmanufacturing the solid-state imaging element of the constitutiondescribed in the first embodiment. FIGS. 6A, 6B, 6C, and 6D and FIGS. 7Aand 7B are principal part sectional process views of the formation of anelectrode in the circuit substrate. The method for manufacturing thecircuit substrate used in the first embodiment will be described in thefollowing with reference to these figures.

[FIG. 5A]

First, as shown in FIG. 5A, a single crystal silicon substrate, forexample, is prepared as a semiconductor substrate 70. A well regioncomposed of impurity layers of respective conductivity types not shownin FIG. 5A is formed in the surface layer of the semiconductor substrate70, and source/drain sections 51 of respective conductivity types and alower electrode of a capacitive element not shown in FIG. 5A are formedin the surface layer of the well region.

The formation of these impurity layers is performed by impurityintroduction from the surface side of the semiconductor substrate 70,and is for example performed by ion implantation from above a mask andsubsequent activating heat treatment. The ion implantation is performedwith implantation energy set appropriately according to the depth ofeach of the impurity layers.

Next, a gate insulating film 53 is formed using a silicon oxide film ora silicon nitride film on the surface of the semiconductor substrate 70in which surface the source/drain sections 51 are formed. Further, agate electrode 55 made of polysilicon is formed on the gate insulatingfilm 53. The gate electrode 55 is formed between the source/drainsections 51. In addition, an upper electrode of the capacitive elementnot shown in FIG. 5A is formed in the same process as the above.

The process up to the above is not particularly limited in processprocedure, but can be performed by an appropriate procedure. Forexample, after the gate electrode 55 is formed on the gate insulatingfilm 53, ion implantation for forming the source/drain sections 51 maybe performed with the gate electrode 55 used as a mask.

[FIG. 5B]

Next, as shown in FIG. 5B, an interlayer insulating film 57 is formed onthe semiconductor substrate 70 in a state of covering the gate electrode55. Further, connecting holes 59 reaching the gate electrode 55 and oneof the source/drain sections 51, respectively, are formed in theinterlayer insulating film 57 and the gate insulating film 53.

Next, the formation of wiring 63 connected to each of the gate electrode55 and one of the source/drain sections 51 via the connecting holes 59and the formation of an interlayer insulating film 61 are performedrepeatedly as required. Suppose that the wiring 63 is formed by using ametallic material having excellent conductivity such as aluminum,tungsten, molybdenum, or the like. In addition, suppose that theinterlayer insulating film 61 in an uppermost layer is formed by a filmhaving an excellent embedding property, and is formed with a flatsurface.

Incidentally, it suffices to perform the above forming process accordingto an ordinary semiconductor process, and the process procedure is notlimited. For example, a so-called damascene process may be applied tothe formation of the wiring 63. In this case, the wiring 63 can beformed by using a metallic material unsuitable for an etching process,such as copper (Cu) or the like.

[FIG. 5C]

Next, as shown in FIG. 5C, an embedded electrode 65 a connected to thewiring 63 is formed in a state of being exposed on the surface side ofthe interlayer insulating film 61. The embedded electrode 65 a is formedby a damascene method, for example.

In this case, first, a depression part 61 a for the electrode and a holepart 61 b (connecting hole 67 shown in FIG. 2) reaching the wiring 63from the bottom part of the depression part 61 a are formed in thesurface layer of the interlayer insulating film 61. Suppose that thedepression part 61 a is a size larger and deeper than a depression partin a depression electrode to be formed in a next process. The formationof the depression part 61 a and the hole part 61 b is performed byforming a mask on the interlayer insulating film 61 by applying alithography method and etching the interlayer insulating film 61 fromabove the mask. Either of the formation of the depression part 61 a andthe formation of the hole part 61 b may be performed first. A process ofremoving the mask is performed after the completion of the etching, andpost-treatment by organic cleaning is further performed.

Next, an embedded wiring material film composed of a barrier metal layerand a copper (Cu) film, for example, is formed on the interlayerinsulating film 61. The barrier metal layer is to prevent the diffusionof copper, and is formed of tantalum (Ta), titanium (Ti), or the like.The formation of the copper (Cu) film is performed by the formation of aseed layer on the barrier metal layer and film formation on the seedlayer by a plating method. The copper (Cu) film is formed with such afilm thickness as to sufficiently fill the depression part 61 a.

Next, an excess copper (Cu) film and an excess barrier metal layer onthe interlayer insulating film 61 are removed by a CMP method, forexample, to leave the copper (Cu) film and the barrier metal layer onlywithin the depression part 61 a, so that the embedded electrode 65 aindividuated within each depression part 61 a is formed. In this case,the CMP surface of the embedded electrode 65 a may be flat.

[FIG. 5D]

Thereafter, as shown in FIG. 5D, a depression part 65 b is formed in thecentral part of the embedded electrode 65 a, so that a depressionelectrode is formed. Thus, a circuit side electrode 65 made of thedepression electrode connected to the wiring 63 is formed in theuppermost layer of the interlayer insulating film 61.

[FIGS. 6A to 6D]

FIGS. 6A to 6D represent a first example of a procedure for forming sucha depression electrode (circuit side electrode 65 in this case). Thefirst example of the method for forming the depression electrode(circuit side electrode 65) will be described in the following withreference to FIGS. 6A to 6D.

[FIG. 6A]

First, as shown in FIG. 6A, a mask pattern 71 is formed on theinterlayer insulating film 61 and the embedded electrode 65 a formed onthe surface side of the interlayer insulating film 61. This mask pattern71 is formed by using a resist material, for example, by a lithographyprocess, and has an aperture 71 a at the central part of the embeddedelectrode 65 a. Suppose that the aperture 71 a has an aperture width w2narrower than the depression part (65 b) to be formed in the embeddedelectrode 65 a. Suppose in this case that the embedded electrode 65 a isformed by a barrier metal layer 65-1 and a copper (Cu) film 65-2, asdescribed above. Incidentally, in this case, as an example, the wiring63 is also shown as embedded wiring composed of a barrier metal layer63-1 and a copper (Cu) film 63-2 formed by a damascene process.

[FIG. 6B]

Next, as shown in FIG. 6B, the surface of the copper (Cu) film 65-2 ofthe embedded electrode 65 a exposed to the aperture 71 a of the maskpattern 71 is treated with a hydrogen peroxide solution (H₂O₂.H₂O) toform a transformed layer a by being changed into copper oxide (Cu₂O).The change into copper oxide (Cu₂O) by such a treatment progressesisotropically. The transformed layer a is therefore formed so as toextend also under the mask pattern 71.

[FIG. 6C]

Thereafter, as shown in FIG. 6C, the transformed layer a formed ofcopper oxide (Cu₂O) is selectively removed by etching with respect tothe copper (Cu) film 65-2. Such selective etching removal of thetransformed layer a is performed by a wet process using a dilutehydrofluoric acid as an etchant. Thus, a depression part 65 b is formedin a part from which the transformed layer a is removed. The depressionpart 65 b is formed so as to extend also under the mask pattern 71.

[FIG. 6D]

The depression part 65 b on the surface side of the copper (Cu) film65-2 exposed from the aperture 71 a of the mask pattern 71 is expandedto an aperture width w3 and a depth d by repeatedly performing theformation of a transformed layer a and the selective removal of thetransformed layer a as described above. Thus, the circuit side electrode65 drawn out to the surface on the side of the circuit substrate 7 isformed as a depression electrode having the depression part 65 b of theaperture width w3 and the depth d. In this repeated process, thedepression part 65 b expands isotropically. Thus, as the repeatedprocess progresses, the inner circumferential wall of the depressionpart 65 b is formed into the shape of a curved surface from a side wallpart, and an area occupied by the shape of the curved surface increases.

Suppose in this case that the aperture width w3 of the depression part65 b is larger than the width w1 of the projection electrode formedearlier (see FIG. 4D). Thus, the projection part of the projectionelectrode (sensor side electrode 45) can be fitted into the depressionpart 65 b of the depression electrode (circuit side electrode 65). Inaddition, a process margin at the time of fitting the projection part ofthe depression electrode (sensor side electrode 45) into the depressionpart 65 b of the depression electrode (circuit side electrode 65) can besecured by designing the aperture width w3 of the depression part 65 bto be sufficiently larger than the width w1 of the projection electrode.

In addition, suppose that the depth d of the depression part 65 b doesnot exceed the projection height h of the projection electrode formedearlier (see FIG. 4D). An end of the projection electrode is abuttedagainst the deepest part of the depression part in a state of theprojection part of the projection electrode (sensor side electrode 45)being fitted in the depression part 65 b of the depression electrode(circuit side electrode 65). In addition, the curvature of the concavecurved surface in the depression part 65 b is desirably smaller than orequal to the curvature of the convex curved surface in the projectionelectrode. Further, the capacity of the depression part 65 b isdesirably substantially equal to the volume of the protruding section ofthe projection electrode which protruding section protrudes from theinterlayer insulating film within a range not less than the volume ofthe protruding section.

The mask pattern 71 is removed after the circuit side electrode 65 drawnout to the surface on the side of the circuit substrate 7 is formed asthe depression electrode having the depression part 65 b in the desiredshape as described above. The mask pattern 71 is removed by a wetprocess using a resist stripper, for example.

[FIGS. 7A and 7B]

FIGS. 7A and 7B represent a second example of a procedure for formingsuch a depression electrode (circuit side electrode 65 in this case).The second example of the method for forming the depression electrode(circuit side electrode 65) will be described in the following withreference to FIGS. 7A and 7B.

[FIG. 7A]

First, as shown in FIG. 7A, a mask pattern 73 is formed on theinterlayer insulating film 61 and the embedded electrode 65 a formed onthe surface side of the interlayer insulating film 61. This mask pattern73 is formed by using a resist material, for example, by a lithographyprocess, and has an aperture 73 a at the central part of the embeddedelectrode 65 a. Suppose that the aperture 73 a has the same aperturewidth w3 as the depression part (65 b) to be formed in the embeddedelectrode 65 a. Suppose in this case that the embedded electrode 65 a isformed by a barrier metal layer 65-1 and a copper (Cu) film 65-2, asdescribed above. Incidentally, in this case, as an example, the wiring63 is also shown as embedded wiring composed of a barrier metal layer63-1 and a copper (Cu) film 63-2 formed by a damascene process.

[FIG. 7B]

Next, as shown in FIG. 7B, the copper (Cu) film 65-2 exposed from theaperature 73 a of the mask pattern 73 is polished by performing CMP fromabove the mask pattern 73, whereby the exposed surface of the copper(Cu) film 65-2 is dished to form the depression part 65 b. In this case,the aperture width w3, the depth d, the curvature of the concave curvedsurface, and the capacity of the depression part 65 b are set similar tothose described above.

The mask pattern 73 is removed after the circuit side electrode 65 drawnout to the surface on the side of the circuit substrate 7 is formed asthe depression electrode having the depression part 65 b in the desiredshape as described above. The mask pattern 73 is removed by a wetprocess using a resist stripper, for example.

5. Method for Manufacturing Solid-State Imaging Element according toFirst Embodiment

A method for manufacturing the solid-state imaging element according tothe first embodiment using the sensor substrate and the circuitsubstrate having the projection electrode and the depression electrodeformed by the above-described procedures will next be described withreference to FIGS. 8 to 10.

[FIG. 8]

First, as shown in FIG. 8, the sensor substrate 2 fabricated by theprocedure described with reference to FIGS. 3A to 4D and the circuitsubstrate 7 fabricated by the procedure described with reference toFIGS. 5A to 7B are arranged so as to be opposed to each other with thesensor side electrodes 45 and the circuit side electrodes 65 facing eachother. In this state, the sensor substrate 2 and the circuit substrate 7are roughly aligned to each other so that the sensor side electrodes 45are in a one-to-one correspondence with the circuit side electrodes 65,and the sensor substrate 2 and the circuit substrate 7 are laminated toeach other.

[FIG. 9A]

In this case, as shown in FIG. 9A, when the sensor substrate 2 and thecircuit substrate 7 are laminated to each other, a projection electrodeas a sensor side electrode 45 is fitted into a depression electrode as acircuit side electrode 65 in a one-to-one correspondence with eachother. In this manner, the sensor substrate 2 and the circuit substrate7 are laminated to each other on a self-alignment basis. In this state,the vertex part of the projection electrode (sensor side electrode 45)is desirably abutted against the bottom part of the depression part 65 bof the depression electrode (circuit side electrode 65).

[FIG. 9B]

Next, as shown in FIG. 9B, the projection electrode (sensor sideelectrode 45) and the depression electrode (circuit side electrode 65)are joined to each other by performing heat treatment. In addition, theinterlayer insulating film 41 of the sensor substrate 2 and theinterlayer insulating film 61 of the circuit substrate 7 are joined toeach other. The temperature and the time of such heat treatment are setaccording to the material forming the projection electrode (sensor sideelectrode 45) and the depression electrode (circuit side electrode 65)such that these electrodes 45 and 65 are sufficiently joined to eachother within ranges in which elements and wiring formed in the sensorsubstrate 2 and the circuit substrate 7 are not affected.

For example, when the projection electrode (sensor side electrode 45)and the depression electrode (circuit side electrode 65) are formed ofthe material having copper (Cu) as a base, heat treatment is performedat 200° C. to 600° C. for about one to five hours. Such heat treatmentmay be performed under a pressurized atmosphere, or may be performedwith the sensor substrate 2 and the circuit substrate 7 pressed fromboth sides. As an example, Cu—Cu joining is achieved by performing heattreatment at 400° C. for four hours.

Such heat treatment causes the projection electrode (sensor sideelectrode 45) and the depression electrode (circuit side electrode 65)to be gradually joined to each other from an initial abutment part, andcauses the inside of the depression part 65 b of the depressionelectrode to be gradually filled with the projection electrode from theside of the bottom part of the depression part 65 b. Thus, the height ofthe projection electrode is decreased gradually, the interlayerinsulating film 41 of the sensor substrate 2 and the interlayerinsulating film 61 of the circuit substrate 7 are abutted against eachother, and the interlayer insulating film 41 and the interlayerinsulating film 61 are joined to each other with an intermolecular bondformed between the silicon oxide forming the interlayer insulating film41 and the silicon oxide forming the interlayer insulating film 61, forexample.

[FIG. 10]

After the sensor substrate 2 and the circuit substrate 7 are laminatedto each other and the sensor substrate 2 and the circuit substrate 7 arejoined to each other in such a manner as to join the electrodes 45 and65 to each other and in such a manner as to join the interlayerinsulating films 41 and 61 to each other as described above, thesemiconductor substrate 20 on the side of the sensor substrate 2 isthinned to form a semiconductor layer 2 a and expose the photoelectricconversion sections 21. In addition, the semiconductor substrate 70 onthe side of the circuit substrate 7 is thinned to form a semiconductorlayer 7 a as required.

[FIG. 2]

Thereafter, as shown in FIG. 2, a protective layer 15 is formed on theexposed surfaces of the photoelectric conversion sections 21, andfurther a color filter layer 17 and an on-chip lens 19 are formed on theprotective layer 15, whereby the solid-state imaging element 1 iscompleted.

In the solid-state imaging element 1 obtained in this manner, theelectrodes 45 and 65 are joined to each other by performing heattreatment in a state of the projection electrodes as the sensor sideelectrodes 45 being fitted into the depression electrodes as the circuitside electrodes 65 in a one-to-one correspondence with each other. Thus,the joining surface between the electrodes 45 and 65 has a shape suchthat the projection electrodes are fitted in the depression electrodes.

Action and Effect of Method for Manufacturing Solid-State ImagingElement according to First Embodiment

According to such a manufacturing method, the sensor substrate 2 and thecircuit substrate 7 are laminated to each other such that the projectionelectrodes formed as the sensor side electrodes 45 are fitted into thedepression electrodes formed as the circuit side electrodes 65. Thus,the sensor substrate 2 and the circuit substrate 7 can be aligned toeach other with good accuracy on a self-alignment basis.

By designing the aperture width w3 of the depression part 65 b in thedepression electrode (circuit side electrode 65) to be sufficientlylarger than the width w1 of the projection electrode at this time, aprocess margin at the time of fitting the projection part of theprojection electrode (sensor side electrode 45) into the depression part65 b of the depression electrode (circuit side electrode 65) can besecured.

In addition, the projection electrode (sensor side electrode 45) isformed with a convex curved surface. This prevents damaging the cornerpart of the projection electrode (sensor side electrode 45) at the timeof fitting the projection electrode (sensor side electrode 45) into thedepression electrode (circuit side electrode 65). It is thus possible toperform smooth fitting without a hitch, and retain the electrode shapesto ensure reliability.

Further, the height h of the projection part of the projection electrodeis made larger than the depth d of the depression part 65 b in thedepression electrode (circuit side electrode 65), and the curvature ofthe concave curved surface in the depression part 65 b is smaller thanor equal to the curvature of the convex curved surface in the projectionelectrode. Thus, an end of the projection electrode is abutted againstthe deepest part of the depression part 65 b in a state of theprojection part of the projection electrode (sensor side electrode 45)being fitted in the depression electrode (circuit side electrode 65),and the joining between the electrodes 45 and 65 can be started promptlyfrom the abutment part of the end of the projection electrode. Inparticular, because the projection electrode (sensor side electrode 45)has a convex curved surface, the joining between the electrodes 45 and65 progresses from the end part of the projection electrode to theperiphery. It is thus possible to prevent a void from occurring as aresult of a gas being trapped in a joining interface between theelectrodes 45 and 65, and secure a joining area between the electrodes45 and 65.

Further, the capacity of the depression part 65 b in the depressionelectrode (circuit side electrode 65) is desirably substantially equalto the volume of the protruding section of the projection electrode(sensor side electrode 45) which protruding section protrudes from theinterlayer insulating film 41 within a range not less than the volume ofthe protruding section. Thus, in a state in which the electrodes 45 and65 are joined to each other, the projection electrode is completelyhoused within the depression electrode, and the interlayer insulatingfilm 41 of the sensor substrate 2 and the interlayer insulating film 61of the circuit substrate 7 can be in close contact with each other.Thus, the interlayer insulating films 41 and 61 can be joined to eachother by an intermolecular bond, and joining strength between the sensorsubstrate 2 and the circuit substrate 7 can be ensured.

Incidentally, as shown in FIG. 9B, when there is a large differencebetween the capacity of the depression part 65 b and the volume of theprotruding section in the projection electrode, voids b can occur in thevicinity of the interface between the sensor substrate 2 and the circuitsubstrate 7 because the joining between the electrodes 45 and 65progresses from the deepest part of the depression part 65 b to theperiphery, as described above. It is therefore desirable that thecapacity of the depression part 65 b and the volume of the protrudingsection in the projection electrode be substantially the same.

6. Constitution of and Method for Manufacture of Solid-State ImagingElement according to Second Embodiment

FIGS. 11A and 11B are principal part sectional process views showingparts of a solid-state imaging element according to a second embodimentand the joining of electrodes. The second embodiment will be describedin the following with reference to FIGS. 11A and 11B. A differencebetween the solid-state imaging element 1′ according to the secondembodiment shown in FIGS. 11A and 11B and the solid-state imagingelement according to the first embodiment described earlier lies in theshape of projection electrodes and depression electrodes, and supposethat the other constitution of the solid-state imaging element 1′according to the second embodiment is similar to that of the solid-stateimaging element according to the first embodiment.

[FIG. 11A]

As shown in FIG. 11A, the protruding section of a sensor side electrode45′ provided as a projection electrode in a sensor substrate 2, whichprotruding section projects from an interlayer insulating film 41, isformed in the shape of a circular cylinder or the shape of a prism. Thebottom surface of the shape of the circular cylinder or the shape of theprism is formed by a flat surface.

In forming such a projection electrode, an embedded electrode in theshape of a circular cylinder or the shape of a prism is first formed onthe surface side of the interlayer insulating film 41 by an embeddingmethod (damascene process). Suppose that at this time, the exposedsurface of the embedded electrode is a flat surface. Thereafter, onlythe interlayer insulating film 41 is made to recede by etching, wherebya projection electrode obtained by allowing the embedded electrode toproject to a desired height h from the interlayer insulating film 41 isformed.

On the other hand, the inner peripheral wall of a depression part 65 b′provided in the center of a circuit side electrode 65′ provided as adepression electrode in a circuit substrate 7 is formed in the shape ofa circular cylinder or the shape of a prism which shape corresponds tothe sensor side electrode 45′.

Suppose in this case that the aperture width w3 of the depression part65 b′ is larger than the width w1 of the projection electrode formedearlier. Thus, the projection part of the projection electrode (sensorside electrode 45′) can be fitted into the depression part 65 b′ of thedepression electrode (circuit side electrode 65′). In addition, aprocess margin at the time of fitting the projection part of theprojection electrode (sensor side electrode 45′) into the depressionpart 65 b′ of the depression electrode (circuit side electrode 65′) canbe secured by designing the aperture width w3 of the depression part 65b′ to be sufficiently larger than the width w1 of the projectionelectrode.

In addition, suppose that the depth d of the depression part 65 b′ doesnot exceed the height h of the projection electrode formed earlier. Anend of the projection electrode is abutted against the deepest part ofthe depression part in a state of the projection part of the projectionelectrode (sensor side electrode 45′) being fitted in the depressionpart 65 b′ of the depression electrode (circuit side electrode 65′).Further, the capacity of the depression part 65 b′ is desirablysubstantially equal to the volume of the protruding section of theprojection electrode which protruding section protrudes from theinterlayer insulating film within a range not less than the volume ofthe protruding section.

In forming such a depression electrode, an embedded electrode is firstformed on the surface side of an interlayer insulating film 61 by anembedding method (damascene process). Suppose that at this time, theexposed surface of the embedded electrode is a flat surface. Thereafter,a mask pattern having an opening for exposing the central part of theembedded electrode is formed, and the central part of the embeddedelectrode is subjected to anisotropic etching from above the maskpattern, whereby the depression electrode (circuit side electrode 65′)having the depression part 65 b′ is formed in the central part. At thistime, it suffices to make the opening of the mask pattern into acircular shape when the inner peripheral wall of the depression part 65b′ has the shape of a circular cylinder, or to make the opening of themask pattern into a quadrangular shape when the inner peripheral wall ofthe depression part 65 b′ has the shape of a quadrangular prism.

The projection electrode as the sensor side electrode 45′ as describedabove is fitted into the depression electrode as the circuit sideelectrode 65′ in a one-to-one correspondence with each other. Thus, thesensor substrate 2 and the circuit substrate 7 are laminated to eachother on a self-alignment basis. In this state, the vertex part of theprojection electrode (sensor side electrode 45′) is desirably abuttedagainst the bottom part of the depression part 65 b′ of the depressionelectrode (circuit side electrode 65′).

[FIG. 11B]

In this state, as shown in FIG. 11B, the projection electrode (sensorside electrode 45′) and the depression electrode (circuit side electrode65′) are joined to each other by performing heat treatment. In addition,the interlayer insulating film 41 of the sensor substrate 2 and theinterlayer insulating film 61 of the circuit substrate 7 are joined toeach other. Such heat treatment is performed in a similar manner to thatof the first embodiment.

Action and Effect of Second Embodiment

According to the solid-state imaging element 1′ according to the secondembodiment described above, the sensor side electrode 45′ is formed as aprojection electrode in the shape of a circular cylinder or the shape ofa prism, the circuit side electrode 65′ is formed as a depressionelectrode corresponding to the projection electrode, and the projectionelectrode is fitted into and joined to the depression electrode. Ajoining area between the sensor side electrode 45′ and the circuit sideelectrode 65′ is larger than in a case where flat electrodes are joinedto each other and a case where a projection electrode and a depressionelectrode formed with a curved surface as described in the firstembodiment are joined to each other. Thus, even when a void occurs atthe joining surface between the sensor side electrode 45′ and thecircuit side electrode 65′ in a joining process, for example, asubstantial joining area can be secured. Such an effect is greater thanin the first embodiment.

As a result, in the solid-state imaging element 1′ of thethree-dimensional structure formed by laminating the sensor substrate 2and the circuit substrate 7 in such a manner as to join the electrodes45′ and 65′ to each other, it is possible to prevent an increase incontact resistance between the electrodes 45′ and 65′ and secure ajoining strength more reliably, and thus improve reliability.

In addition, even in the case of the method of fitting a projectionelectrode in the shape of a circular cylinder or the shape of a prism asdescribed above into a depression electrode of a shape corresponding tothe projection electrode, the sensor substrate 2 and the circuitsubstrate 7 can be aligned to each other with good accuracy on aself-alignment basis, as in the first embodiment.

By designing the aperture width w3 of the depression part 65 b′ in thedepression electrode (circuit side electrode 65′) to be sufficientlylarger than the width w1 of the projection electrode at this time, aprocess margin at the time of fitting the projection electrode into thedepression electrode can be secured, as in the first embodiment.

Further, the height h of the projection part of the projection electrodeis made larger than the depth d of the depression part 65 b′ in thedepression electrode (circuit side electrode 65′), whereby an end of theprojection electrode is abutted against the deepest part of thedepression part 65 b′ in the depression electrode (circuit sideelectrode 65′). Thus, the joining between the electrodes 45′ and 65′progresses promptly from the bottom surface as the end part of theprojection electrode to the periphery.

Further, the capacity of the depression part 65 b′ in the depressionelectrode (circuit side electrode 65′) is desirably substantially equalto the volume of the protruding section of the projection electrode(sensor side electrode 45′) which protruding section protrudes from theinterlayer insulating film 41 within a range not less than the volume ofthe protruding section. Thus, in a state in which the electrodes 45′ and65′ are joined to each other, the projection electrode is completelyhoused within the depression electrode, and the interlayer insulatingfilm 41 of the sensor substrate 2 and the interlayer insulating film 61of the circuit substrate 7 can be in close contact with each other, asin the first embodiment.

Incidentally, as shown in FIG. 11B, when there is a large differencebetween the capacity of the depression part 65 b′ and the volume of theprotruding section in the projection electrode, voids can occur in thevicinity of the interface between the sensor substrate 2 and the circuitsubstrate 7. It is therefore desirable that the capacity of thedepression part 65 b′ and the volume of the protruding section in theprojection electrode be substantially the same, as in the firstembodiment.

7. Constitution of and Method for Manufacture of Solid-State ImagingElement according to Third Embodiment

FIGS. 12A and 12B are principal part sectional process views showingparts of a solid-state imaging element according to a third embodimentand the joining of electrodes. The third embodiment will be described inthe following with reference to FIGS. 12A and 12B. A difference betweenthe solid-state imaging element 1″ according to the third embodimentshown in FIGS. 12A and 12B and the solid-state imaging element accordingto the first embodiment described earlier lies in the shape ofprojection electrodes and depression electrodes, and suppose that theother constitution of the solid-state imaging element 1″ according tothe third embodiment is similar to that of the solid-state imagingelement according to the first embodiment.

[FIG. 12A]

As shown in FIG. 12A, a sensor side electrode 45″ provided as aprojection electrode in a sensor substrate 2 has a plurality ofprotruding sections protruding from an interlayer insulating film 41.Each protruding section for example has a convex curved surface in asubstantially hemispheric shape as described in the first embodiment, oris formed in the shape of a circular cylinder or the shape of a prism asdescribed in the second embodiment. In this case, one projectionelectrode formed as the sensor side electrode 45″ is shown having threeconvex curved surfaces in a substantially hemispheric shape.

In forming such a projection electrode, an embedded electrode is firstformed on the surface side of the interlayer insulating film 41 by anembedding method (damascene process). Suppose that at this time, theexposed surface of the embedded electrode is a flat surface. Thereafter,a mask pattern covering a plurality of parts of the exposed surface ofthe embedded electrode is formed, and the embedded electrode and theinterlayer insulating film 41 are made to recede by etching from abovethe mask pattern, so that a plurality of protruding sections are formedon the embedded electrode. Thereafter, the protruding sections areformed into a convex curved surface by performing CMP or isotropicetching. Thus, the projection electrode having electrodes projected to adesired height h from the interlayer insulating film 41 is formed.

On the other hand, a circuit side electrode 65″ provided as a depressionelectrode in a circuit substrate 7 has a plurality of depression parts65 b″ in the central part of a surface facing the side of the sensorsubstrate 2. The inner peripheral wall of each depression part 65 b″ isformed by the electrode surface of the circuit side electrode 65″, andis formed with a concave curved surface or in the shape of a circularcylinder or the shape of a prism corresponding to the protrudingsections formed in the projection electrode formed as the sensor sideelectrode 45″. In this case, one depression electrode formed as thecircuit side electrode 65″ is shown having three depression parts 65 b″.

Suppose in this case that the aperture width w3 of each depression part65 b″ is larger than the width w1 of the projection electrode formedearlier. Thus, the projection parts of the projection electrode (sensorside electrode 45″) can be fitted into the respective depression parts65 b″ of the depression electrode (circuit side electrode 65″). Inaddition, a process margin at the time of fitting the projection partsof the projection electrode (sensor side electrode 45″) into thedepression parts 65 b″ of the depression electrode can be secured bydesigning the aperture width w3 of the depression parts 65 b″ to besufficiently larger than the width w1 of the projection parts of theprojection electrode.

In addition, suppose that the depth d of the depression parts 65 b″ doesnot exceed the height h of the projection electrode formed earlier.Thus, an end of the projection electrode is abutted against the deepestparts of the depression parts in a state of the projection parts of theprojection electrode (sensor side electrode 45″) being fitted in thedepression parts 65 b″ of the depression electrode (circuit sideelectrode 65″). Further, the capacity of the depression parts 65 b″ isdesirably substantially equal to the volume of the protruding sectionsof the projection electrode which protruding sections protrude from theinterlayer insulating film within a range not less than the volume ofthe protruding sections.

In forming such a depression electrode, an embedded electrode is firstformed on the surface side of an interlayer insulating film 61 by anembedding method (damascene process). Suppose that at this time, theexposed surface of the embedded electrode is a flat surface. Thereafter,a mask pattern having openings for exposing a plurality of parts of theexposed surface of the embedded electrode is formed. Next, the formationand etching of a transformed layer similar to that described withreference to FIGS. 6A to 6D in the first embodiment is repeated, or CMPis performed in a similar manner to that described with reference toFIGS. 7A and 7B, whereby the depression electrode 65″ having theplurality of depression parts 65 b″ is formed.

The projection electrode as the sensor side electrode 45″ as describedabove is fitted into the depression electrode as the circuit sideelectrode 65″ in a one-to-one correspondence with each other. Thus, thesensor substrate 2 and the circuit substrate 7 are laminated to eachother on a self-alignment basis. In this state, the vertex parts of theprotruding sections of the projection electrode (sensor side electrode45″) are desirably abutted against the bottom parts of the respectivedepression parts 65 b″ of the depression electrode (circuit sideelectrode 65″).

[FIG. 12B]

In this state, as shown in FIG. 12B, the projection electrode (sensorside electrode 45″) and the depression electrode (circuit side electrode65″) are joined to each other by performing heat treatment. In addition,the interlayer insulating film 41 of the sensor substrate 2 and theinterlayer insulating film 61 of the circuit substrate 7 are joined toeach other. Such heat treatment is performed in a similar manner to thatof the first embodiment.

Action and Effect of Third Embodiment

According to the solid-state imaging element 1″ according to the thirdembodiment described above, the sensor side electrode 45″ is formed as aprojection electrode having a plurality of protruding sections, thecircuit side electrode 65″ is formed as a depression electrode having aplurality of depression parts 65 b″ corresponding to the projectionelectrode, and the projection electrode is fitted into and joined to thedepression electrode. A joining area between the sensor side electrode45″ and the circuit side electrode 65″ is larger than in a case whereflat electrodes are joined to each other, as in the first embodiment.Thus, even when a void occurs at the joining surface between the sensorside electrode 45″ and the circuit side electrode 65″ in a joiningprocess, for example, a substantial joining area can be secured.

As a result, in the solid-state imaging element 1″ of thethree-dimensional structure formed by laminating the sensor substrate 2and the circuit substrate 7 in such a manner as to join the electrodes45″ and 65″ to each other, it is possible to prevent an increase incontact resistance between the electrodes 45″ and 65″ and secure ajoining strength more reliably, and thus improve reliability.

In addition, as in the first embodiment, because of the method offitting the projection electrode into the depression electrode of ashape corresponding to the projection electrode, the sensor substrate 2and the circuit substrate 7 can be aligned to each other with goodaccuracy on a self-alignment basis.

In addition, the size and shape of each depression part 65 b″ in thedepression electrode (circuit side electrode 65″) as well as the sizeand shape of each protruding section in the projection electrode (sensorside electrode 45″) are similar to those of the first embodiment.Therefore similar effects to those of the first embodiment can beobtained.

Incidentally, in each of the foregoing embodiments, the sensor sideelectrode is a projection electrode, and the circuit side electrode is adepression electrode. However, in the present technology, either of thesensor side electrode and the circuit side electrode may be a projectionelectrode or a depression electrode as long as the sensor side electrodeand the circuit side electrode are jointed to each other in a state ofthe projection electrode being fitted in the depression electrode. Inaddition, a projection electrode and a depression electrode may beprovided as sensor side electrodes, and a depression electrode and aprojection electrode to be fitted into the sensor side electrodes may beprovided as circuit side electrodes corresponding to the respectivesensor side electrodes.

In addition, in each of the above embodiments, description has been madeof a case where the depression electrodes and the projection electrodesforming the sensor side electrodes and the circuit side electrodes areformed of copper (Cu). However, the depression electrodes and theprojection electrodes are not limited to this. It suffices for thedepression electrodes and the projection electrodes to be formed of amaterial enabling the depression electrodes and the projectionelectrodes to be joined to each other while retaining a good contactproperty. For example, aluminum or a metal silicide material such astungsten silicide or the like can be used for the depression electrodesand the projection electrodes.

In cases where these materials are used, for the formation of theprojection electrodes, the electrodes can be pattern-formed on aninterlayer insulating film by etching a material film with a resistpattern formed by a lithography method used as a mask. In addition, theelectrodes can be formed into the shape of a convex curved surface bythereafter performing CMP.

On the other hand, for the formation of the depression electrodes, amethod similar to that of the foregoing embodiments can be applied withprocess conditions changed as appropriate. In addition, the electrodesare pattern-formed on an interlayer insulating film by etching amaterial film with a resist pattern formed by a lithography method usedas a mask, and further an interlayer insulating film covering theelectrodes is formed. Thereafter, the electrode pattern is exposed byCMP, and then depression parts may be formed in the electrode pattern ina similar manner to that described with reference to FIGS. 6A to 6D orFIGS. 7A and 7B in the first embodiment.

In addition, the respective surfaces of the depression electrodes andthe projection electrodes may be formed by rough surfaces. Such roughsurfaces are formed by a surface roughening process such as asandblasting process or the like after the formation of the electrodes,for example. Thus making the surfaces of the depression electrodes andthe projection electrodes rough surfaces can further increase a joiningarea, and thus further increase a joining strength.

8. Embodiment of Electronic Device

The solid-state imaging element described in each of the foregoingembodiments of the present technology is for example applicable toelectronic devices including camera systems such as digital cameras,video cameras, and the like, portable telephones having an imagingfunction, or other devices having an imaging function.

FIG. 13 is a block diagram of a camera using a solid-state imagingelement as an example of an electronic device according to the presenttechnology. The camera according to the example of a present embodimentis an example of a video camera capable of photographing a still imageor a moving image. The camera 91 according to the example of the presentembodiment includes: a solid-state imaging element 1; an optical system93 for guiding incident light to a light receiving sensor section of thesolid-state imaging element 1; a shutter device 94; a driving circuit 95for driving the solid-state imaging element 1; and a signal processingcircuit 96 for processing an output signal of the solid-state imagingelement 1.

The solid-state imaging elements (1, 1′, and 1″) of the constitutionsdescribed in the foregoing respective embodiments are applied as thesolid-state imaging element 1. The optical system (optical lens) 93forms image light (incident light) from a subject on an imaging surfaceof the solid-state imaging element 1. Thus, a signal charge isaccumulated within the solid-state imaging element 1 in a certainperiod. The optical system 93 may be an optical lens system composed ofa plurality of optical lenses. The shutter device 94 controls a periodof irradiation of the solid-state imaging element 1 with light and aperiod of shielding the solid-state imaging element 1 from light. Thedriving circuit 95 supplies a driving signal for controlling thetransfer operation of the solid-state imaging element 1 and the shutteroperation of the shutter device 94. The signal transfer of thesolid-state imaging element 1 is performed according to the drivingsignal (timing signal) supplied from the driving circuit 95. The signalprocessing circuit 96 performs various signal processing. A video signalresulting from the signal processing is stored on a storage medium suchas a memory or the like, or output to a monitor.

The electronic device according to the present embodiment describedabove can be miniaturized and improved in reliability by using thesolid-state imaging element 1 of the highly reliable three-dimensionalstructure in which the sensor substrate and the circuit substrate arelaminated to each other.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A semiconductor device comprising: a firstsubstrate; a second substrate laminated to the first substrate; aprojection electrode extending to a first surface of the first substratewhich faces the second substrate, wherein the projection electrodeincludes a projecting surface that projects from the first surface ofthe first substrate; and a depression electrode extending to a secondsurface of the second substrate which faces the first substrate andjoined to the projection electrode in a state of the projectionelectrode and the depression electrode being fitted together such thatthe projecting surface and a side surface of the projection electrode isin physical and electrical contact with a recessed surface and a sidesurface of the depression electrode, and the first surface of the firstsubstrate and the second surface of the second substrate being in directphysical contact with one another, wherein the recessed surface of thedepression electrode recedes from the second surface of the secondsubstrate, wherein a part of the projection electrode is covered by afirst barrier layer and/or a part of the depression electrode is coveredby a second barrier layer.
 2. The semiconductor device according toclaim 1, wherein in a case where the part of the projection electrode iscovered by the first barrier layer, the first barrier layer is disposedbetween the projection electrode and the first substrate, and in a casewhere the part of the depression electrode is covered by the secondbarrier layer, the second barrier layer is disposed between thedepression electrode and the second substrate.
 3. The semiconductordevice according to claim 1, wherein the first barrier layer and thesecond barrier layer include tantalum or titanium.
 4. The semiconductordevice according to claim 1, wherein the first barrier layer includes ametal nitride.
 5. The semiconductor device according to claim 1, whereinthe projecting surface and the side surface of the projection electrodedefine an outer circumference that is surrounded by the depressionelectrode.
 6. The semiconductor device according to claim 1, furthercomprising: a first insulating film surrounding the projectionelectrode; and a second insulating film surrounding the depressionelectrode, wherein the first insulating film and the second insulatingfilm are in close contact with each other.
 7. The semiconductor deviceaccording to claim 6, wherein the first insulating film and the secondinsulating film include silicon and oxygen.
 8. The semiconductor deviceaccording to claim 1, wherein the first substrate includes aphotoelectric conversion device.
 9. The semiconductor device accordingto claim 1, wherein the projecting surface of the projection electrodecomprises a plurality of projection parts; and the recessed surface ofthe depression electrode comprises a plurality of depression parts. 10.A method of manufacturing a semiconductor device, comprising: providinga first substrate; providing a second substrate; forming a projectionelectrode in a first surface of the first substrate which faces thesecond substrate, wherein the projection electrode includes a projectingsurface that projects from the first surface of the first substrate;forming a depression electrode in a second surface of the secondsubstrate which faces the first substrate, wherein the depressionelectrode includes a recessed surface that recedes from the secondsurface of the second substrate; and laminating the second substrate tothe first substrate such that the depression electrode is joined to theprojection electrode in a state of the projection electrode and thedepression electrode being fitted together such that the projectingsurface and a side surface of the projection electrode is in physicaland electrical contact with the recessed surface and a side surface ofthe depression electrode, and the first surface of the first substrateand the second surface of the second substrate being in direct physicalcontact with one another, wherein a part of the projection electrode iscovered by a first barrier layer and/or a part of the depressionelectrode is covered by a second barrier layer.
 11. The method accordingto claim 10, wherein in a case where the part of the projectionelectrode is covered by the first barrier layer, the first barrier layeris disposed between the projection electrode and the first substrate,and in a case where the part of the depression electrode is covered bythe second barrier layer, the second barrier layer is disposed betweenthe depression electrode and the second substrate.
 12. The methodaccording to claim 10, wherein the first barrier layer and the secondbarrier layer include tantalum or titanium.
 13. The method according toclaim 10, wherein the first barrier layer includes a metal nitride. 14.The method according to claim 10, wherein the projecting surface and theside surface of the projection electrode define an outer circumferencethat is surrounded by the depression electrode.
 15. The method accordingto claim 10, further comprising: a first insulating film surrounding theprojection electrode; and a second insulating film surrounding thedepression electrode, wherein the first insulating film and the secondinsulating film are in close contact with each other.
 16. The methodaccording to claim 15, wherein the first insulating film and the secondinsulating film include silicon and oxygen.
 17. The method according toclaim 10, wherein the first substrate includes a photoelectricconversion device.
 18. The method according to claim 10, wherein theprojecting surface of the projection electrode comprises a plurality ofprojection parts; and the recessed surface of the depression electrodecomprises a plurality of depression parts.
 19. An electronic apparatuscomprising: a semiconductor device including: a first substrate, asecond substrate laminated to the first substrate, a projectionelectrode extending to a first surface of the first substrate whichfaces the second substrate, wherein the projection electrode includes aprojecting surface that projects from the first surface of the firstsubstrate, and a depression electrode extending to a second surface ofthe second substrate which faces the first substrate and joined to theprojection electrode in a state of the projection electrode and thedepression electrode being fitted together such that the projectingsurface and a side surface of the projection electrode is in physicaland electrical contact with a recessed surface and a side surface of thedepression electrode, and the first surface of the first substrate andthe second surface of the second substrate being in direct physicalcontact with one another, wherein the recessed surface of the depressionelectrode recedes from the second surface of the second substrate,wherein a part of the projection electrode is covered by a first barrierlayer and/or a part of the depression electrode is covered by a secondbarrier layer.
 20. The electronic apparatus according to claim 19,wherein in a case where the part of the projection electrode is coveredby the first barrier layer, the first barrier layer is disposed betweenthe projection electrode and the first substrate, and in a case wherethe part of the depression electrode is covered by the second barrierlayer, the second barrier layer is disposed between the depressionelectrode and the second substrate.